A MODEL FOR THE INTERPRETATION OF MEASUREMENTS OF PHOTOIONIZATION AND CAPTURE CROSS-SECTIONS ASSOCIATED WITH DEEP-LEVEL IMPURITIES

被引：39

作者：

RIDLEY, BK ^{[1
]}

AMATO, MA ^{[1
]}

机构：

[1] UNIV BRASILIA,BRASILIA 70000,DF,BRAZIL

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 09期

关键词：

D O I：

10.1088/0022-3719/14/9/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1255 / 1269

页数：15

相关论文

共 35 条

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[5] PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV
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[6] BALTENKOV AS, 1976, SOV PHYS SEMICOND+, V10, P688
[7] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS
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[8] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS
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