ELECTRICAL-PROPERTIES OF ELECTRON-BEAM-EVAPORATED INDIUM OXIDE THIN-FILMS

被引：14

作者：

BALASUBRAMANIAN, A

RADHAKRISHNAN, M

BALASUBRAMANIAN, C

机构：

来源：

THIN SOLID FILMS | 1982年 / 91卷 / 01期

关键词：

D O I：

10.1016/0040-6090(82)90125-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：71 / 79

页数：9

共 38 条

[1] THICKNESS DEPENDENCE OF BREAKDOWN FIELD IN THIN FILMS [J].

AGARWAL, VK ;

SRIVASTAVA, VK .

THIN SOLID FILMS, 1971, 8 (05) :377-+

[2] DIELECTRIC PROPERTIES OF THIN FILMS OF ALUMINIUM OXIDE AND SILICON OXIDE [J].

ARGALL, F ;

JONSCHER, AK .

THIN SOLID FILMS, 1968, 2 (03) :185-&

[3]

BALASUBRAMANIAN A, 1979, DEC P ANN S NUCL P C, V22, P206

[4] DIELECTRIC PROPERTIES OF ALUMINUM-OXIDE FILMS [J].

BIREY, H .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2898-2904

[5] DESTRUCTIVE BREAKDOWN IN THIN FILMS OF SIO MGF2 CAF2 CEF3 CEO2 AND TEFLON [J].

BUDENSTEIN, PP ;

HAYES, PJ ;

SMITH, JL ;

SMITH, WB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (02) :289-+

[6] ELECTRONIC PROPERTIES OF MODEL AMORPHOUS-SEMICONDUCTOR STRUCTURES [J].

BULLETT, DW ;

KELLY, MJ .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :225-239

[7] ELECTRICAL BREAKDOWN IN THIN DIELECTRIC FILMS [J].

FORLANI, F ;

MINNAJA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :518-+

[8] THICKNESS INFLUENCE IN BREAKDOWN PHENOMENA OF THIN DIELECTRIC FILMS [J].

FORLANI, F ;

MINNAJA, N .

PHYSICA STATUS SOLIDI, 1964, 4 (02) :311-324

[9] ELECTRICAL PROPERTIES OF SILICON MONOXIDE [J].

FROST, MS ;

JONSCHER, AK .

THIN SOLID FILMS, 1975, 29 (01) :7-18

[10] AC BEHAVIOR AND DIELECTRIC-RELAXATION IN INDIUM OXIDE-FILMS [J].

GOSWAMI, A ;

GOSWAMI, AP .

PRAMANA, 1977, 8 (04) :335-347

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