MIS ELECTROLUMINESCENT DIODES IN ZNTE PREPARED BY AL VAPOR DIFFUSION

被引：21

作者：

GU, J ^{[1
]}

TONOMURA, K ^{[1
]}

YOSHIKAWA, N ^{[1
]}

SAKAGUCH.T ^{[1
]}

机构：

[1] KYOTO UNIV, FAC ENGN, DEPT ELECT ENGN, KYOTO, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.1662021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4692 / 4695

页数：4

共 10 条

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[2] EFFICIENT INJECTION ELECTROLUMINESCENCE IN ZNTE BY AVALANCHE BREAKDOWN - (QUANTUM EFFICIENCY 2 PERCENT AT 5380 A - 77 DEGREES K - LI-DOPED - E) [J].

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[3]

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[4] MIS ELECTROLUMINESCENT DIODES IN ZNTE [J].

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[5]

FISCHER AG, 1964, RADIATION RECOMBINAT

[6] NEW ELECTROLUMINESCENT SPECTRUM IN ZNTE RESULTING FROM OXYGEN INCORPORATION [J].

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[7]

MOREHEAD FF, 1967, PHYSICS CHEMISTRY 2

[8] BARRIER HEIGHTS AND CONTACT PROPERTIES OF N-TYPE ZNSE CRYSTALS [J].

SWANK, RK ;

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DEVINE, JZ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :89-&

[9] FORWARD AND REVERSE BIASED ELECTROLUMINESCENCE IN ALLOYED ZNTE DIODES [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (01) :12-&

[10] EVIDENCE FOR AVALANCHE INJECTION LASER IN P-TYPE GAAS (BREAKDOWN OF HIGH-RESISTIVITY REGION E) [J].

WEISER, K ;

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