OPTICALLY EXCITED BULK SEMICONDUCTOR LASERS

被引：6

作者：

MAGEE, CJ

HAUG, H

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1970年 / QE 6卷 / 06期

关键词：

D O I：

10.1109/JQE.1970.1076466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：392 / +

页数：1

共 32 条

[1]

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[2]

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[3]

BASOV NG, 1967, FIZ TVERD TELA+, V9, P65

[4] LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GAAS-GE [J].

BURNHAM, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

ROSSI, JA .

APPLIED PHYSICS LETTERS, 1969, 14 (06) :190-&

[5] LASER TRANSITION AND WAVELENGTH LIMITS OF GAAS [J].

DAPKUS, PD ;

HOLONYAK, N ;

ROSSI, JA ;

WILLIAMS, FV ;

HIGH, DA .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3300-&

[6] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].

DOUSMANIS, GC ;

STAEBLER, DL ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1964, 5 (09) :174-&

[7]

EAGLES OM, 1960, PHYS CHEM SOLIDS, V16, P76

[8] ZUR THEORIE DES HALBLEITER-LASERS [J].

HAKEN, E ;

HAKEN, H .

ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04) :421-+

[9] QUANTUM NOISE OPERATORS FOR N-LEVEL SYSTEM [J].

HAKEN, H ;

WEIDLICH, W .

ZEITSCHRIFT FUR PHYSIK, 1966, 189 (01) :1-&

[10] COHERENT LIGHT EMISSION FROM P-N JUNCTIONS [J].

HALL, RN .

SOLID-STATE ELECTRONICS, 1963, 6 (05) :405-&

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