RAPID THERMAL ANNEALING OF HOT IMPLANTS IN SILICON

被引：3

作者：

COFFA, S

CALCAGNO, L

SPINELLA, C

CAMPISANO, SU

FOTI, G

RIMINI, E

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90802-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：357 / 361

页数：5

共 12 条

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[2]

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[3] STRONG DOPANT DEPENDENCE OF IMPLANTATION DETECT ACCUMULATION AND AMORPHIZATION IN HIGHLY DOPED SILICON [J].

DVURECHENSKII, AV ;

GROETZSCHEL, R ;

POPOV, VP .

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[4]

FELDMAN LC, 1982, MATERIALS ANAL ION C, pCH4

[5]

FOTI G, 1978, PHYS REV B, V18, P2078

[6] ION-INDUCED EPITAXIAL-GROWTH OF CHEMICAL VAPOR-DEPOSITED SI LAYERS [J].

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RIMINI, E ;

FERLA, G .

APPLIED PHYSICS LETTERS, 1988, 52 (09) :712-714

[7]

LAFERLA A, 1987, PHOTON BEAM PLASMA E, P325

[8]

MADER S, 1984, ION IMPLANTATION SCI, P109

[9]

OLSON GL, 1985, MATER RES SOC S P, V35, P25

[10] A REVIEW OF RAPID THERMAL ANNEALING (RTA) OF B, BF2 AND AS IONS IMPLANTED INTO SILICON [J].

SEIDEL, TE ;

LISCHNER, DJ ;

PAI, CS ;

KNOELL, RV ;

MAHER, DM ;

JACOBSON, DC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :251-260

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