ION-INDUCED EPITAXIAL-GROWTH OF CHEMICAL VAPOR-DEPOSITED SI LAYERS

被引：17

作者：

LAFERLA, A ^{[1
]}

RIMINI, E ^{[1
]}

FERLA, G ^{[1
]}

机构：

[1] MICROELETTRON SPA,SGS,I-95100 CATANIA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.99355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：712 / 714

页数：3

共 13 条

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :59-61

[2] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J].

CULLIS, AG ;

SEIDEL, TE ;

MEEK, RL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5188-5198

[3] ION-BEAM-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF SILICON [J].

ELLIMAN, RG ;

WILLIAMS, JS ;

BROWN, WL ;

LEIBERICH, A ;

MAHER, DM ;

KNOELL, RV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :435-442

[4] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON [J].

FOTI, G ;

BEAN, JC ;

POATE, JM ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :840-842

[5] LATERAL SOLID-PHASE EPITAXY OF SI INDUCED BY FOCUSED ION-BEAMS [J].

KANAYAMA, T ;

TANOUE, H ;

KOMURO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02) :L84-L86

[6] ORIENTATION AND DOPING EFFECTS IN ION-BEAM ANNEALING OF ALPHA-SILICON [J].

LAFERLA, A ;

CANNAVO, S ;

FERLA, G ;

CAMPISANO, SU ;

RIMINI, E ;

SERVIDORI, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :470-474

[7]

LAFERLA A, 1987, PHOTON BEAM PLASMA E, P325

[8]

LAU S. S., 1980, HDB SEMICONDUCTORS, V3

[9]

OLSON GL, 1985, MATER RES SOC S P, V35, P25

[10] SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS [J].

VONALLMEN, M ;

LAU, SS ;

MAYER, JW ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :280-282

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