SOME RELIABILITY CONSIDERATIONS PERTAINING TO LSI TECHNOLOGY

被引:8
作者
SCHLACTER, MM
KEEN, RS
SCHNABLE, GL
机构
关键词
D O I
10.1109/JSSC.1971.1050195
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:327 / +
页数:1
相关论文
共 50 条
[1]   ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J].
ATTARDO, MJ ;
ROSENBERG, R .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2381-+
[2]  
BESSER PJ, 1968, F3060267C0184 CONTR
[3]  
BLACK J, 1968, AF3060267 CONTR
[4]   ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].
BLACK, JR .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&
[5]  
BLECH IA, 1967, PHYS FAIL ELECTRON, V5, P496
[6]  
BRAUER J, 1966, ELECTRON ENG, V25, P78
[7]  
BRAUER J, 1969, MICROELECTRONICS, V2, P23
[8]  
BRAUER J, 1969, MICROELECTRONICS, V2, P17
[9]  
CAMPBELL JF, 1969, OCT EL SOC M DETR
[10]   EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].
CHOU, NJ ;
ELDRIDGE, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+