BIRDS BEAK CONFIGURATION AND ELIMINATION OF GATE OXIDE THINNING PRODUCED DURING SELECTIVE OXIDATION

被引:29
作者
SHANKOFF, TA
SHENG, TT
HASZKO, SE
MARCUS, RB
SMITH, TE
机构
关键词
D O I
10.1149/1.2129621
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:216 / 222
页数:7
相关论文
共 7 条
[1]   TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J].
BASSOUS, E ;
YU, HN ;
MANISCALCO, V .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1729-1737
[2]  
CLEMENS JT, UNPUBLISHED
[3]   FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J].
KOOI, E ;
VANLIEROP, JG ;
APPELS, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1117-1120
[4]   THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].
MURARKA, SP ;
CHANG, CC ;
ADAMS, AC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :996-1003
[5]   GATE OXIDE THINNING AT ISOLATION OXIDE WALL [J].
SHENG, TT ;
MARCUS, RB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :432-434
[6]  
SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447
[7]  
SHENG TT, UNPUBLISHED