GROWTH OF ASYMMETRIC LAYERS ON INP(110)

被引：19

作者：

TULKE, A

LUTH, H

机构：

来源：

SURFACE SCIENCE | 1989年 / 211卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(89)90867-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：1001 / 1011

页数：11

相关论文

共 23 条

[1] OXIDATION OF CLEAVED INAS(110) SURFACES AT ROOM-TEMPERATURE - SURFACE BAND-BENDING AND IONIZATION-ENERGY
BAIER, HU
KOENDERS, L
MONCH, W
[J]. SOLID STATE COMMUNICATIONS, 1986, 58 (05) : 327 - 331
[2] EFFECT OF TEMPERATURE ON SURFACE-STRUCTURE AND STOICHIOMETRY OF (100) INP SURFACES
BAYLISS, CR
KIRK, DL
[J]. THIN SOLID FILMS, 1975, 29 (01) : 97 - 106
[3] ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110)
BERTONI, CM
CALANDRA, C
MANGHI, F
MOLINARI, E
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 1251 - 1258
[4] LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110)
CARELLI, J
KAHN, A
[J]. SURFACE SCIENCE, 1982, 116 (02) : 380 - 390
[5] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[6] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML)
DUKE, CB
PATON, A
FORD, WK
KAHN, A
CARELLI, J
[J]. PHYSICAL REVIEW B, 1982, 26 (02): : 803 - 814
[7] PROPERTIES OF INP(110) SURFACES, INP(110)-AG INTERFACES AND INP(110)-AG SCHOTTKY DIODES - CONTRIBUTION OF THE TEMPERATURE
DUMAS, M
BENKACEM, M
PALAU, JM
LASSABATERE, L
[J]. SURFACE SCIENCE, 1987, 189 : 315 - 321
[8] RADIATION-INDUCED BAND BENDING ON GAAS(110)
GEURTS, J
LATTA, EE
REIHL, B
[J]. SURFACE SCIENCE, 1989, 211 (1-3) : 565 - 571
[9] INTERFACIAL CHEMISTRY AND SCHOTTKY-BARRIER FORMATION OF THE NI/INP(110) AND NI/GAAS(110) INTERFACES
KENDELEWICZ, T
WILLIAMS, MD
PETRO, WG
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1985, 32 (06): : 3758 - 3765
[10] LEY L, 1972, PHYS REV B, V8, P641