INTERFACIAL CHEMISTRY AND SCHOTTKY-BARRIER FORMATION OF THE NI/INP(110) AND NI/GAAS(110) INTERFACES

被引：26

作者：

KENDELEWICZ, T

WILLIAMS, MD

PETRO, WG

LINDAU, I

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.32.3758

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3758 / 3765

页数：8

共 33 条

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[4] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
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[5] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES
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[6] ELECTRONIC-STRUCTURE OF NICKEL SILICIDES NI2SI, NISI, AND NISI2
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[J]. PHYSICAL REVIEW B, 1982, 26 (02) : 546 - 553
[7] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL
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[8] MEASUREMENT OF POTENTIAL AT SEMICONDUCTOR INTERFACES BY ELECTRON-SPECTROSCOPY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 320 - 327
[9] HANSEN M, 1958, CONSTITUTION BINARY, P1027
[10] HOKELEK E, 1983, J APPL PHYS, V54, P5199, DOI 10.1063/1.332745

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