CHARACTERIZATION OF EPITAXIALLY GROWN FILMS OF VANADIUM-OXIDES

被引：63

作者：

ROGERS, KD

COATH, JA

LOVELL, MC

机构：

[1] Cranfield Institute of Technology (RMCS), Swindon, Wiltshire

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.349550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of VO2 and V2O3 thin films by reactive sputtering has been investigated. Previously reported studies of such thin films have often presented ambiguous results concerning the precise nature of the layers produced. A thorough and comprehensive characterization program including x-ray diffraction, scanning electron microscopy, Rutherford-backscattering spectroscopy, and electrical conductivity measurements has been undertaken to ensure that the films produced were of a true epitaxial nature.

引用

页码：1412 / 1415

页数：4

共 13 条

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