PROTECTIVE OVERLAYER TECHNIQUES FOR PREPARATION OF INSB(001) SURFACES

被引：21

作者：

EVANS, SD

CAO, LL

EGDELL, RG

DROOPAD, R

PARKER, SD

STRADLING, RA

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT CHEM,LONDON SW7 2AY,ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT PHYS,LONDON SW7 2BZ,ENGLAND

[3] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

SURFACE SCIENCE | 1990年 / 226卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(90)90163-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A procedure has been developed for the preparation of clean, ordered InSb(001) surfaces outside epitaxial growth systems. This involves deposition of Sb caps onto freshly grown InSb(001) in a MBE system. The cap protects the underlying InSb from atmospheric contamination and can be removed subsequently from the InSb surface by thermal treatment alone to regenerate an ordered InSb(001) surface suitable for surface science experiments. HREELS measurement show that the carrier concentration at the surface of Si-doped InSb(001) (n+ = 1 × 1018 cm-3) prepared in this way is close to the bulk value. © 1990.

引用

页码：169 / 179

页数：11

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