MICA ETCH PITS AS A HEIGHT CALIBRATION SOURCE FOR ATOMIC-FORCE MICROSCOPY

被引:35
作者
NAGAHARA, LA
HASHIMOTO, K
FUJISHIMA, A
SNOWDENLFFT, D
PRICE, PB
机构
[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[2] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期
关键词
D O I
10.1116/1.587265
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe a simple technique for creating etch pits in muscovite mica substrates for calibration purposes in atomic force microscopy (AFM). The etch pits are produced by wet etching the mica substrates in concentrated hydrofluoric acid and are formed with specific geometry. Along the long axis of the etch pits, steps of approximately 2 nm are observed which correspond to the molecular planes of mica. These steps bifurcate into 1 nm steps along the short axis. It is these 1- and 2-nm-high steps that permit height calibration.
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页码:1694 / 1697
页数:4
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