CALIBRATION OF HEIGHT IN ATOMIC FORCE MICROSCOPE IMAGES WITH SUBNANOMETER SCALE SILICON DIOXIDE STEPS

被引：26

作者：

OHMI, T

AOYAMA, S

机构：

[1] Department of Electronics, Faculty of Engineering, Tohoku University

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 20期

关键词：

D O I：

10.1063/1.108158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Patterned SiO2 surfaces formed on silicon wafer were observed by the atomic force microscope (AFM). The samples which have fine steps were prepared by wet etching with newly developed buffered hydrogen fluoride (BHF) which has an extremely low etching rate of around 1 angstrom/min level. The height data in the AFM images were successfully calibrated with etching depth measured by the ellipsometry. We recommend this method to calibrate the z-axis in the scanning probe microscope images at sub-nanometer scale.

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页码：2479 / 2480

页数：2

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