PHOTOELECTROCHEMICAL BEHAVIOR OF N-GAAS ELECTRODES IN AMBIENT-TEMPERATURE MOLTEN-SALT ELECTROLYTES - DEVICE CHARACTERIZATION AND LOSS MECHANISMS

被引：23

作者：

SINGH, P

SINGH, R

RAJESHWAR, K

DUBOW, J

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 05期

关键词：

D O I：

10.1149/1.2127567

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1145 / 1150

页数：6

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