TOTAL-DOSE EFFECTS ON NEGATIVE VOLTAGE REGULATOR

被引：70

作者：

BEAUCOUR, J

CARRIERE, T

GACH, A

LAXAGUE, D

POIROT, P

机构：

[1] MATRA MARCONI SPACE, 78146 Velizy Villacoublay cedex, 37

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Functional failure at low dose level (4 Krad(Si)) on voltage regulators (LM137) from different manufacturers are analysed. Dose rate effects on parts hardness are evaluated, showing that lowering the dose rate degrade more the IC's in the range 55 rad(Si)/s- 0,8 rad(Si)/s A failure mechanism is proposed, mainly based on circuit analysis, voltage contrast measurements, local irradiation and local electrical measurements with probe station. A spice simulation was performed, providing quantitative informations on the degradation. In the light of such a failure analysis and dose rate effects, practical implications on radiation assurance are discussed.

引用

页码：2420 / 2426

页数：7

共 8 条

[1]

FLEETWOOD DM, 1994, IN PRESS IEEE T NUCL

[2] MODELS FOR TOTAL DOSE DEGRADATION OF LINEAR INTEGRATED-CIRCUITS [J].

JOHNSTON, AH ;

PLAAG, RE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1474-1480

[3]

JOHNSTON AH, 1994, IN PRESS IEEE T DEC

[4]

MACCLURE S, 1994, IN PRESS IEEE T DEC

[5] HARDNESS-ASSURANCE AND TESTING ISSUES FOR BIPOLAR/BICMOS DEVICES [J].

NOWLIN, RN ;

FLEETWOOD, DM ;

SCHRIMPF, RD ;

PEASE, RL ;

COMBS, WE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1686-1693

[6] TRENDS IN THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS [J].

NOWLIN, RN ;

ENLOW, EW ;

SCHRIMPF, RD ;

COMBS, WE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :2026-2035

[7]

OLDHAM TR, 1983, IEEE T NUC SCI, V30

[8]

PALKUTI LJ, 1976, IEEE T NUCL SCI, V23

← 1 →