TRENDS IN THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS

被引：113

作者：

NOWLIN, RN

ENLOW, EW

SCHRIMPF, RD

COMBS, WE

机构：

[1] MISSION RES CORP,ALBUQUERQUE,NM 87106

[2] USN,CTR SURFACE WARFARE,CRANE,IN 47522

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The primary degradation in modern bipolar transistors that are subjected to ionizing radiation is a reduction in current gain. There are many factors that influence the total-dose response of bipolar transistors, including emitter bias, transistor polarity, emitter technology, emitter geometry, base design, and dose rate. The effects of each of these factors are investigated. Physical mechanisms consistent with the observed effects are described.

引用

页码：2026 / 2035

页数：10

共 18 条

[1]

BARNES CE, 1991, 1991 RADECS C P MONT, P41

[2]

Box G.E.P., 1978, STAT EXPT, P374

[3] MODELING HOT-CARRIER EFFECTS IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J].