DEFECT FORMATION IN GAAS BY SUBTHRESHOLD ENERGY (0.2-3 KEV) ELECTRON-IRRADIATION

被引：9

作者：

NEL, M

AURET, FD

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 12期

关键词：

D O I：

10.1143/JJAP.28.2430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2430 / 2435

页数：6

相关论文

共 21 条

[1] A DLTS ANALYSIS OF ELECTRON AND HOLE TRAPS IN VPE GROWN N-GAAS USING SCHOTTKY-BARRIER DIODES
AURET, FD
NEL, M
LEITCH, AWR
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) : 111 - 113
[2] DETECTION OF MINORITY-CARRIER DEFECTS BY DEEP LEVEL TRANSIENT SPECTROSCOPY USING SCHOTTKY-BARRIER DIODES
AURET, FD
NEL, M
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2546 - 2549
[3] AURET FD, 1988, J APPL PHYS, V64, P2422
[4] MESSUNG DER ENERGIE ZUR VERLAGERUNG EINES GITTERATOMS DURCH ELEKTRONENSTOB IN AIIIBV-VERBINDUNGEN
BAUERLEIN, R
[J]. ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04): : 498 - &
[5] COMPTON WD, 1961, J APPL PHYS, V31, P62
[6] GHANDI SK, 1982, VLSI FABRICATION PRI, P321
[7] KLEINHENZ R, 1984, 13TH INT C DEF SEM C, P627
[8] IONIZATION MECHANISM OF THE DEFECT PRODUCTION IN SEMICONDUCTORS
KLINGER, MI
EMTSEV, VV
MASHOVETS, TV
RYVKIN, SM
VITOVSKII, NA
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 56 (3-4): : 229 - 239
[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[10] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS
LANG, DV
LOGAN, RA
KIMERLING, LC
[J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882