DETECTION OF MINORITY-CARRIER DEFECTS BY DEEP LEVEL TRANSIENT SPECTROSCOPY USING SCHOTTKY-BARRIER DIODES

被引：32

作者：

AURET, FD

NEL, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.337931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2546 / 2549

页数：4

共 21 条

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[2] CHARACTERIZATION OF DEFECTS INTRODUCED DURING DC MAGNETRON SPUTTER DEPOSITION OF TI-W ON N-SI [J].

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[3] DEEP LEVELS INTRODUCED DURING ELECTRON-BEAM DEPOSITION OF METALS ON N-TYPE SILICON [J].

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[4] TRANSIENT CAPACITANCE STUDY OF DEFECTS INTRODUCED BY ELECTRON-BEAM DEPOSITION OF METALS ON P-TYPE SILICON [J].

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MOONEY, PM .

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[5]

AURET FD, 1984, J APPL PHYS, V55, P1581, DOI 10.1063/1.333418

[6]

AURET FD, UNPUB

[7] CALCULATION OF CHARGE-DISTRIBUTIONS AND MINORITY-CARRIER INJECTION RATIO FOR HIGH-BARRIER SCHOTTKY DIODES [J].

ELFSTEN, B ;

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SOLID-STATE ELECTRONICS, 1985, 28 (07) :721-727

[8] MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1973, 16 (10) :1141-1150

[9]

HUANG CH, 1976, J VAC SCI TECHNOL, V12, P876

[10] 2 DEEP HOLE TRAPS IN BORON-IMPLANTED PHOSPHORUS-DOPED SILICON [J].

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