CALCULATION OF CHARGE-DISTRIBUTIONS AND MINORITY-CARRIER INJECTION RATIO FOR HIGH-BARRIER SCHOTTKY DIODES

被引：22

作者：

ELFSTEN, B

TOVE, PA

机构：

[1] Univ of Uppsala, Electronic Dep,, Uppsala, Swed, Univ of Uppsala, Electronic Dep, Uppsala, Swed

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 07期

关键词：

D O I：

10.1016/0038-1101(85)90023-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

11

引用

收藏

页码：721 / 727

页数：7

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