A COMPARISON BETWEEN THE DIFFUSION-MODEL AND THE COMBINED DIFFUSION-THERMIONIC-EMISSION MODEL FOR MS-JUNCTIONS BY 2-CARRIER NUMERICAL COMPUTATIONS

被引:8
作者
MASSZI, F
STOLT, L
TOVE, PA
TARNAY, K
机构
来源
PHYSICA SCRIPTA | 1981年 / 24卷 / 02期
关键词
D O I
10.1088/0031-8949/24/2/023
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:456 / 460
页数:5
相关论文
共 13 条
[1]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[2]   RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS [J].
CROWELL, CR ;
BEGUWALA, M .
SOLID-STATE ELECTRONICS, 1971, 14 (11) :1149-&
[3]   AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J].
DEMARI, A .
SOLID-STATE ELECTRONICS, 1968, 11 (01) :33-+
[5]   MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES [J].
GREEN, MA ;
SHEWCHUN, J .
SOLID-STATE ELECTRONICS, 1973, 16 (10) :1141-1150
[7]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[8]   MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].
NORDE, H .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053
[9]  
PIRES JD, 1979, APPL PHYS LETT, V35, P202
[10]  
RHODERICK EH, 1978, METAL SEMICONDUCTOR, P95