SCHOTTKY RECTIFIERS ON SILICON USING HIGH BARRIERS

被引:15
作者
STOLT, L
BOHLIN, K
TOVE, PA
NORDE, H
机构
关键词
D O I
10.1016/0038-1101(83)90126-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:295 / 297
页数:3
相关论文
共 6 条
[1]  
CROWELL CR, 1971, SOLID ST ELECTRON, V14, P1189
[2]   CARRIER MOBILITIES IN SILICON SEMI-EMPIRICALLY RELATED TO TEMPERATURE, DOPING AND INJECTION LEVEL [J].
DORKEL, JM ;
LETURCQ, P .
SOLID-STATE ELECTRONICS, 1981, 24 (09) :821-825
[3]   OHMIC CONTACTS ON SEMICONDUCTORS USING INDIUM AMALGAM [J].
HILL, R ;
WILSON, S ;
RICHARDSON, D .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) :185-+
[4]   A COMPARISON BETWEEN THE DIFFUSION-MODEL AND THE COMBINED DIFFUSION-THERMIONIC-EMISSION MODEL FOR MS-JUNCTIONS BY 2-CARRIER NUMERICAL COMPUTATIONS [J].
MASSZI, F ;
STOLT, L ;
TOVE, PA ;
TARNAY, K .
PHYSICA SCRIPTA, 1981, 24 (02) :456-460
[5]   MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].
NORDE, H .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053
[6]  
SEIBT W, COMMUNICATION