DEEP LEVEL TRANSIENT SPECTROSCOPIC OBSERVATIONS OF DEFECTS INDUCED IN SI DURING S-GUN SPUTTER DEPOSITION OF TI-W

被引：5

作者：

AURET, FD ^{[1
]}

MATUSIEWICZ, GM ^{[1
]}

机构：

[1] IBM CORP,HOPEWELL JUNCTION,NY 12533

来源：

VACUUM | 1985年 / 35卷 / 4-5期

关键词：

D O I：

10.1016/0042-207X(85)90658-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：195 / 198

页数：4

共 13 条

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