DEEP LEVELS INTRODUCED DURING ELECTRON-BEAM DEPOSITION OF METALS ON N-TYPE SILICON

被引：44

作者：

AURET, FD

MOONEY, PM

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,E FISHKILL LABS,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：988 / 993

页数：6

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