PROCESS CONDITIONS AFFECTING HOT-ELECTRON TRAPPING IN DC MAGNETRON SPUTTERED MOS DEVICES

被引：9

作者：

BOJARCZUK, NA

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来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

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D O I：

10.1116/1.570986

中图分类号：

O59 [应用物理学];

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页码：890 / 894

页数：5

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