A DLTS ANALYSIS OF ELECTRON AND HOLE TRAPS IN VPE GROWN N-GAAS USING SCHOTTKY-BARRIER DIODES

被引：4

作者：

AURET, FD

NEL, M

LEITCH, AWR

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 02期

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D O I：

10.1007/BF02652139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：111 / 113

页数：3

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