PERFORMANCE-CHARACTERISTICS OF (INAS)1/(GAAS)N SHORT-PERIOD SUPERLATTICE QUANTUM-WELL LASER

被引：3

作者：

DUTTA, NK

CHAND, N

LOPATA, J

WETZEL, R

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 25期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19921497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analysed both experimentally and theoretically. The measured threshold current density depends strongly on the number of periods in the superlattice structure. The radiative recombination rate and the gain against carrier density relationship in monolayer superlattice structures are calculated. The calculated threshold current density agrees well with the measured data. Laser emission has been observed at 1-23 mum using an (InAs)1/(GaAs)2 superlattice active region.

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页码：2326 / 2327

页数：2

相关论文

共 12 条

[1]

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH9

[2] EXCELLENT UNIFORMITY AND VERY LOW (LESS-THAN-50 A/CM2) THRESHOLD CURRENT-DENSITY STRAINED INGAAS QUANTUM-WELL DIODE-LASERS ON GAAS SUBSTRATE [J].

CHAND, N ;

BECKER, EE ;

VANDERZIEL, JP ;

CHU, SNG ;

DUTTA, NK .

APPLIED PHYSICS LETTERS, 1991, 58 (16) :1704-1706

[3] SPECTRAL NOISE-FIGURE OF ER3+-DOPED FIBER AMPLIFIERS [J].

DESURVIRE, E .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (03) :208-210

[4] QUANTUM-WELL LASER WITH SINGLE INAS MONOLAYER IN ACTIVE REGION [J].

DOTOR, ML ;

HUERTAS, P ;

MELENDEZ, J ;

MAZUELAS, A ;

GARRIGA, M ;

GOLMAYO, D ;

BRIONES, F .

ELECTRONICS LETTERS, 1992, 28 (10) :935-937

[5] (INAS)1/(GAAS)4 SUPERLATTICES QUANTUM-WELL LASER [J].

DUTTA, NK ;

CHAND, N ;

LOPATA, J ;

WETZEL, R .

APPLIED PHYSICS LETTERS, 1992, 60 (08) :924-925

[6] OPTICAL INVESTIGATION OF THE BAND-STRUCTURE OF INAS/GAAS SHORT-PERIOD SUPERLATTICES [J].

GERARD, JM ;

MARZIN, JY ;

DANTERROCHES, C ;

SOUCAIL, B ;

VOISIN, P .

APPLIED PHYSICS LETTERS, 1989, 55 (06) :559-561

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J].

GRUNTHANER, FJ ;

YEN, MY ;

FERNANDEZ, R ;

LEE, TC ;

MADHUKAR, A ;

LEWIS, BF .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :983-985

[8] QUASI-PARTICLE CALCULATION OF THE ELECTRONIC BAND-STRUCTURE OF THE (INAS)1/(GAAS)1 SUPERLATTICE [J].

PADJEN, R ;

PAQUET, D .

PHYSICAL REVIEW B, 1991, 43 (06) :4915-4919

[9] EFFECT OF INDIUM REPLACEMENT BY GALLIUM ON THE ENERGY GAPS OF INAS/GAAS THIN-LAYER STRUCTURES [J].

SATO, M ;

HORIKOSHI, Y .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) :7697-7702

[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS/GAAS SUPERLATTICES ON GAAS SUBSTRATES AND ITS APPLICATION TO A SUPERLATTICE CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

TOYOSHIMA, H ;

ONDA, K ;

MIZUKI, E ;

SAMOTO, N ;

KUZUHARA, M ;

ITOH, T ;

OKAMOTO, A ;

ANAN, T ;

ICHIHASHI, T .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) :3941-3949