QUANTUM-WELL LASER WITH SINGLE INAS MONOLAYER IN ACTIVE REGION

被引：8

作者：

DOTOR, ML

HUERTAS, P

MELENDEZ, J

MAZUELAS, A

GARRIGA, M

GOLMAYO, D

BRIONES, F

机构：

[1] Centro National de Microelectronica, 28006 Madrid

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 10期

关键词：

SEMICONDUCTOR LASERS; LASERS; SEMICONDUCTOR GROWTH; EPITAXIAL GROWTH;

D O I：

10.1049/el:19920592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single monolayer thick InAs quantum well laser structure has been grown at low substrate temperature by atomic layer molecular beam epitaxy (ALMBE). The laser has an emission wavelength of approximately 884nm and a threshold current density of 1.97kA/cm2 at room temperature. This value is lower than values obtained for other monolayer thick quantum well lasers, and it demonstrates the device quality of epitaxial layers grown at 350-degrees-C by ALMBE.

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收藏

页码：935 / 937

页数：3

相关论文

共 13 条

[1] LOW-TEMPERATURE (350-DEGREES-C) GROWTH OF ALGAAS/GAAS LASER DIODE BY MIGRATION ENHANCED EPITAXY [J].

ASAI, M ;

SATO, F ;

IMAMOTO, H ;

IMANAKA, K ;

SHIMURA, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) :432-434

[2] STRUCTURAL AND OPTICAL-PROPERTIES OF (100) INAS SINGLE-MONOLAYER QUANTUM-WELLS IN BULKLIKE GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BRANDT, O ;

TAPFER, L ;

CINGOLANI, R ;

PLOOG, K ;

HOHENSTEIN, M ;

PHILLIPP, F .

PHYSICAL REVIEW B, 1990, 41 (18) :12599-12606

[3] LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY [J].

BRIONES, F ;

GONZALEZ, L ;

RECIO, M ;

VAZQUEZ, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1125-L1127

[4] ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE) OF III-V COMPOUNDS - GROWTH MODES AND APPLICATIONS [J].

BRIONES, F ;

GONZALEZ, L ;

RUIZ, A .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (06) :729-737

[5] (INAS)1/(GAAS)4 SUPERLATTICE STRAINED QUANTUM-WELL LASER AT 980 NM [J].

CHAND, N ;

DUTTA, NK ;

CHU, SNG ;

LOPATA, J .

ELECTRONICS LETTERS, 1991, 27 (22) :2009-2011

[6] INGAAS/ALGAAS STRAINED SINGLE QUANTUM-WELL DIODE-LASERS WITH EXTREMELY LOW THRESHOLD CURRENT-DENSITY AND HIGH-EFFICIENCY [J].

CHOI, HK ;

WANG, CA .

APPLIED PHYSICS LETTERS, 1990, 57 (04) :321-323

[7]

GONZALEZ L, 1989, NATO ADV SCI I E-APP, V160, P37

[8] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870

[9] STIMULATED-EMISSION FROM MONOLAYER-THICK ALXGA1-XAS-GAAS SINGLE QUANTUM WELL HETEROSTRUCTURES [J].

LEE, JH ;

HSIEH, KY ;

HWANG, YL ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :626-628

[10] PHOTOLUMINESCENCE AND STIMULATED-EMISSION FROM MONOLAYER-THICK PSEUDOMORPHIC INAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].

LEE, JH ;

HSIEH, KY ;

KOLBAS, RM .

PHYSICAL REVIEW B, 1990, 41 (11) :7678-7684