PHOTOLUMINESCENCE AND ITS EXCIMER-LASER IRRADIATION EFFECTS IN SIO2 FILM PREPARED BY PHOTOINDUCED CHEMICAL-VAPOR-DEPOSITION

被引：10

作者：

KANASHIMA, T

OKUYAMA, M

HAMAKAWA, Y

机构：

[1] Department of Electrical Engineering, Osaka University, Toyonaka, Osaka, 560, 1-1, Machikaneyama-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1993年 / 32卷 / 6B期

关键词：

SIO2 THIN FILM; PHOTO-CVD; PHOTOLUMINESCENCE; ABSORPTION; EXCIMER LASER IRRADIATION;

D O I：

10.1143/JJAP.32.3113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects and other imperfections in photo-induced chemical vapor deposition (photo-CVD) SiO2 films have been characterized by photoluminescence excited by ArF and F2 excimer lasers. Photoluminescence peaks have been observed at around 2.7, 3.5 and 4.4 eV and are characteristic of both the deposition temperatures of photo-CVD and excitation energy. The intensity of the photoluminescence peak at around 2.7 eV initially increases with ArF excimer laser irradiation but decreases after about 2000 shots. On the other hand, it decreases monotonously with F2 excimer laser irradiation. The origins of these peaks have been discussed in terms of various dependences of photoluminescence and absorption spectra.

引用

页码：3113 / 3119

页数：7

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