TRAPPED-HOLE ANNEALING AND ELECTRON TRAPPING IN METAL-OXIDE-SEMICONDUCTOR DEVICES

Thermally stimulated current- and capacitance-voltage techniques are combined to provide the first quantitative estimates of the contributions of trapped-hole annealing and electron trapping to oxide-trap charge neutralization in metal-oxide-semiconductor devices. For 350-nm nonradiation-hardened oxides, trapped electrons compensate approximately 15% of the radiation-induced trapped positive charge after x-ray irradiation (evidently forming dipolar defects), and approximately 65% of the trapped positive charge remaining after positive-bias annealing at 80-degrees-C. For 45-nm radiation-hardened oxides, trapped electrons compensate approximately 45% of the trapped positive charge after irradiation, and approximately 70% after annealing. Implications for models of oxide-trap-charge buildup and annealing are discussed.