THE INFLUENCE OF STEPS ON THE ADSORPTION OF CS ON SI(100)

被引：30

作者：

KENNOU, S

KAMARATOS, M

LADAS, S

PAPAGEORGOPOULOS, CA

机构：

来源：

SURFACE SCIENCE | 1989年 / 216卷 / 03期

关键词：

D O I：

10.1016/0039-6028(89)90387-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：462 / 471

页数：10

共 21 条

[1] ENERGY-LOSS SPECTROSCOPY STUDY OF SI(111)-ALKALI METAL INTERFACES AT LOW-TEMPERATURES [J].

AVCI, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1400-1403

[2] NOVEL ELECTRONIC-PROPERTIES OF A POTASSIUM OVERLAYER ON SI(001)-(2X1) [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW LETTERS, 1986, 56 (08) :877-880

[3] METALLIZATION OF SILICON UPON POTASSIUM ADSORPTION [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW LETTERS, 1987, 58 (19) :1982-1985

[4] ELECTRONIC PROMOTERS AND SEMICONDUCTOR OXIDATION - ALKALI-METALS ON SI(111) SURFACES [J].

FRANCIOSI, A ;

SOUKIASSIAN, P ;

PHILIP, P ;

CHANG, S ;

WALL, A ;

RAISANEN, A ;

TROULLIER, N .

PHYSICAL REVIEW B, 1987, 35 (02) :910-913

[5] WORK FUNCTION VARIATIONS OF GALLIUM-ARSENIDE CLEAVED SINGLE-CRYSTALS [J].

HUIJSER, A ;

VANLAAR, J .

SURFACE SCIENCE, 1975, 52 (01) :202-210

[6] LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J].

KAPLAN, R .

SURFACE SCIENCE, 1980, 93 (01) :145-158

[7] THE INFLUENCE OF STEPS ON THE EPITAXIAL-GROWTH OF IRON-SILICIDE ON SI(001) [J].

KENNOU, S ;

CHERIEF, N ;

CINTI, RC ;

TAN, TAN .

SURFACE SCIENCE, 1989, 211 (1-3) :685-691

[8] THE BEHAVIOR OF CS ON MOS2 [J].

KENNOU, S ;

LADAS, S ;

PAPAGEORGOPOULOS, C .

SURFACE SCIENCE, 1985, 152 (APR) :1213-1221

[9] THE ADSORPTION AND THERMAL-DECOMPOSITION OF ACETYLENE ON SI(100) AND VICINAL SI(100)9-DEGREES [J].

NISHIJIMA, M ;

YOSHINOBU, J ;

TSUDA, H ;

ONCHI, M .

SURFACE SCIENCE, 1987, 192 (2-3) :383-397

[10] ULTRATHIN GATE OXIDES FORMED BY CATALYTIC-OXIDATION OF SILICON [J].

OELLIG, EM ;

MICHEL, EG ;

ASENSIO, MC ;

MIRANDA, R .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1660-1662

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