ULTRATHIN GATE OXIDES FORMED BY CATALYTIC-OXIDATION OF SILICON

被引：47

作者：

OELLIG, EM

MICHEL, EG

ASENSIO, MC

MIRANDA, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 23期

关键词：

D O I：

10.1063/1.97760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1660 / 1662

页数：3

共 16 条

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[4] VLSI TECHNOLOGY AND DIELECTRIC FILM SCIENCE
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[5] MICROSCOPIC CONTROL OF SEMICONDUCTOR SURFACE OXIDATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 933 - 937
[6] GRUNTHANER FJ, 1979, PHYS REV LETT, V43, P1638
[7] ENHANCEMENT OF SI OXIDATION BY CERIUM OVERLAYERS AND FORMATION OF CERIUM SILICATE
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[J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5377 - 5380
[8] METASTABLE MOLECULAR PRECURSOR FOR THE DISSOCIATIVE ADSORPTION OF OXYGEN ON SI(111)
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[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (27) : 2979 - 2982
[9] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION
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HIMPSEL, FJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 93 - 95
[10] MODIFICATION OF THE GERMANIUM OXIDATION PROCESS BY ALUMINUM ADATOMS
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 619 - 621

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