SEQUENTIAL ETCH ANALYSIS OF ELECTRON INJECTION IN P+-GAAS

被引：7

作者：

KLAUSMEIERBROWN, ME

KYONO, CS

DEMOULIN, PD

TOBIN, SP

LUNDSTROM, MS

MELLOCH, MR

机构：

[1] UNIV TEXAS,DEPT ELECTR & COMP ENGN,AUSTIN,TX 78754

[2] SPIRE CORP,BEDFORD,MA 01730

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

SEMICONDUCTOR MATERIALS - Growth - SOLAR CELLS - Chemical Vapor Deposition - TRANSISTORS; BIPOLAR; -; Design;

D O I：

10.1109/16.3384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of heavy impurity doping of electron injection currents in p** plus -n diodes is investigated experimentally. By extracting the n equals 1 diffusion current after successive etches of the p** plus -layer, the electron injection current is characterized. The technique is applied to a metal organic chemical vapor decomposition (MOCVD) grown GaAs solar cell Zn-doped 1. 2 multiplied by 10**1**0 cm**-**3 on the p-side. The results, which demonstrate that so-called bandgap narrowing effects enhance the injected electron current, have important implications for the design of GaAs solar cells and bipolar transistors.

引用

页码：1159 / 1161

页数：3

共 11 条

[1] ELECTRON-MOBILITY IN P-GAAS BY TIME OF FLIGHT [J].