EFFICIENT NUMERICAL SOLUTION OF TRANSMISSION-LINE EQUIVALENT-CIRCUIT MODEL OF A SEMICONDUCTOR

被引：6

作者：

GREEN, MA

SHEWCHUN, J

机构：

[1] MCMASTER UNIV, DEPT ELECT ENGN, HAMILTON, ONTARIO, CANADA

[2] MCMASTER UNIV, DEPT ENGN PHYS, HAMILTON, ONTARIO, CANADA

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 20期

关键词：

D O I：

10.1049/el:19730347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：474 / 475

页数：2

共 8 条

[1] MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1973, 16 (10) :1141-1150

[2] SIMPLIFIED COMPUTATIONAL TREATMENT OF RECOMBINATION CENTERS IN TRANSMISSION-LINE EQUIVALENT CIRCUIT MODEL OF A SEMICONDUCTOR [J].

GREEN, MA ;

TEMPLE, VAK ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1972, 15 (09) :1027-+

[3]

HENNIG F, TO BE PUBLISHED

[4]

SAH CT, 1967, PR INST ELECTR ELECT, V55, P654

[5] EQUIVALENT CIRCUIT MODEL IN SOLID-STATE ELECTRONICS .3. CONDUCTION AND DISPLACEMENT CURRENTS [J].

SAH, CT .

SOLID-STATE ELECTRONICS, 1970, 13 (12) :1547-+

[6] SMALL-SIGNAL EQUIVALENT PI NETWORKS FOR CARRIER GENERATION-RECOMBINATION-TRAPPING AT IMPERFECTION CENTRES IN SEMICONDUCTORS [J].

SAH, CT .

ELECTRONICS LETTERS, 1971, 7 (24) :713-+

[7] APPLICATION OF TRANSMISSION-LINE EQUIVALENT CIRCUIT MODEL TO ANALYSIS OF PN JUNCTION ADMITTANCE UNDER DC BIAS [J].

SMILEY, CF ;

YAU, LD ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :895-901

[8] EXACT FREQUENCY-DEPENDENT COMPLEX ADMITTANCE OF MOS DIODE INCLUDING SURFACE STATES, SHOCKLEY-READ-HALL (SRH) IMPURITY EFFECTS, AND LOW-TEMPERATURE DOPANT IMPURITY RESPONSE [J].

TEMPLE, V ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1973, 16 (01) :93-113

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