EFFECT OF HYDROGEN CARRIER GAS-FLOW RATE ON ELECTRICAL PROPERTIES OF EPITAXIAL GAAS PREPARED IN A HYDRIDE SYSTEM

被引：14

作者：

KENNEDY, JK ^{[1
]}

POTTER, WD ^{[1
]}

DAVIES, DE ^{[1
]}

机构：

[1] USAF, CAMBRIDGE RES LABS, LG HANSCOM FIELD, BEDFORD, MA 01730 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 24卷 / OCT期

关键词：

D O I：

10.1016/0022-0248(74)90310-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：233 / 238

页数：6

共 19 条

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[3]

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JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[5] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

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[6]

EDDOLLS DV, 1966, P INT S GALLIUM ARSE, P3

[7]

ENSTROM RE, 1967, T METALL SOC AIME, V239, P413

[8]

ENSTROM RE, 1970, 3RD P INT S GALL ARS, P30

[9]

ENSTROM RE, 1968, 2 P INT S GAAS I PHY, P213

[10] EFFECT OF VARIOUS GROWTH PARAMETERS ON FORMATION OF PITS AND HILLOCKS ON SURFACE OF EPITAXIAL GAAS LAYERS [J].

KENNEDY, JK ;

POTTER, WD .

JOURNAL OF CRYSTAL GROWTH, 1973, 19 (02) :85-89

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