EFFECT OF VARIOUS GROWTH PARAMETERS ON FORMATION OF PITS AND HILLOCKS ON SURFACE OF EPITAXIAL GAAS LAYERS

被引：19

作者：

KENNEDY, JK ^{[1
]}

POTTER, WD ^{[1
]}

机构：

[1] USAF,SYST COMMAND,CAMBRIDGE RES LABS,LG HANSCOM FIELD,BEDFORD,MA 01730

来源：

关键词：

D O I：

10.1016/0022-0248(73)90015-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：85 / 89

页数：5

共 12 条

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[4]

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EWING, RE ;

GREENE, PE .

[6]

JOYCE BD, 1967, 1ST P INT S GALL ARS, P23

[7] PITS AND HILLOCKS ON EPITAXIAL GAAS GROWN FROM VAPOR PHASE [J].

MINDEN, HT .

[8]

REISMAN A, 1964, J ELECTROCHEM SOC, V111, P12

[9] EPITAXIAL GAAS KINETIC STUDIES - (001)ORIENTATION [J].

SHAW, DW .

[10] FACETED DEFECTS IN GAAS EPITAXIAL LAYERS [J].

SHAW, DW .