PITS AND HILLOCKS ON EPITAXIAL GAAS GROWN FROM VAPOR PHASE

被引：18

作者：

MINDEN, HT

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(71)90020-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：37 / &

共 17 条

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[5] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J].

EFFER, D .

EWING, RE ;

GREENE, PE .

HOLLOWAY, H ;

BOBB, LC .

[8] GROWTH PYRAMIDS IN EPITAXIAL GAAS [J].

JOYCE, BD ;

MULLIN, JB .

[9]

KONTRIMAS R, 1968, ELECTROCHEM TECHNOL, V6, P78

[10]

MARUYAMA M, 1969, J ELECTROCHEM SOC EL, V115, P413