THERMAL GROWTH OF SIO2-SI INTERFACES ON A SI(111)7X7 SURFACE MODIFIED BY CESIUM

被引：72

作者：

STARNBERG, HI ^{[1
]}

SOUKIASSIAN, P ^{[1
]}

BAKSHI, MH ^{[1
]}

HURYCH, Z ^{[1
]}

机构：

[1] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.37.1315

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1315 / 1319

页数：5

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