SHALLOW DONORS IN SEMIINSULATING GAAS AND THEIR ROLE IN THE EXCITATION OF THE 0.64-EV PHOTOLUMINESCENCE

被引：19

作者：

PAGET, D ^{[1
]}

KLEIN, PB ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.971

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：971 / 978

页数：8

共 21 条

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PHYSICAL REVIEW B, 1973, 8 (02) :535-552

[5] QUENCHING EFFECT OF LUMINESCENCE IN BULK SEMI-INSULATING GAAS [J].

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GUILLOT, G .

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[6]

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[7]

MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399

[8] A LUMINESCENCE BAND ASSOCIATED WITH THE MAIN ELECTRON TRAP IN BULK GALLIUM-ARSENIDE [J].

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MAKRAMEBEID, S .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1007-1009

[9]

PAGET D, 1985, DEFECTS SEMICONDUCTO, P959

[10] EVIDENCE THAT THE 0.635-EV LUMINESCENCE BAND IN SEMI-INSULATING GAAS IS NOT EL2 RELATED [J].

SAMUELSON, L ;

OMLING, P ;

GRIMMEISS, HG .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :521-523

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