SELECTIVE EXCITATION LUMINESCENCE IN BULK-GROWN GAAS

被引：32

作者：

HUNTER, AT

MCGILL, TC

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.93031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：169 / 171

页数：3

共 11 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

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[2] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].

BALDERES.A ;

LIPARI, NO .

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[3] ACCEPTOR EXCITED-STATES IN INDIUM-PHOSPHIDE [J].

DEAN, PJ ;

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SOLID STATE COMMUNICATIONS, 1979, 32 (05) :379-384

[4] DYE-LASER SELECTIVE SPECTROSCOPY IN BULK-GROWN INDIUM-PHOSPHIDE [J].

DEAN, PJ ;

ROBBINS, DJ ;

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STRADLING, RA ;

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[6] INHOMOGENEOUS LINE BROADENING IN DONOR MAGNETO-OPTICAL SPECTRA [J].

LARSEN, DM .

PHYSICAL REVIEW B, 1973, 8 (02) :535-552

[7] 2-HOLE TRANSITION IN LUMINESCENCE OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAAS [J].

SCHAIRER, W ;

YEP, TO .

SOLID STATE COMMUNICATIONS, 1971, 9 (07) :421-&

[8] EXCITED-STATES OF SHALLOW ACCEPTORS IN ZNSE [J].

TEWS, H ;

VENGHAUS, H ;

DEAN, PJ .

PHYSICAL REVIEW B, 1979, 19 (10) :5178-5184

[9] SELECTIVE PAIR LUMINESCENCE IN SEMICONDUCTORS [J].

TEWS, H ;

VENGHAUS, H .

SOLID STATE COMMUNICATIONS, 1979, 30 (04) :219-221

[10] ACCEPTOR LEVELS IN GALLIUM-ARSENIDE [J].

WHITE, AM ;

DEAN, PJ ;

ASHEN, DJ ;

MULLIN, JB ;

WEBB, M ;

DAY, B ;

GREENE, PD .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (11) :L243-L246

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