SELECTIVE PAIR LUMINESCENCE IN SEMICONDUCTORS

被引：28

作者：

TEWS, H

VENGHAUS, H

机构：

[1] Max-Planck-Institut für Festkörperforschung

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 30卷 / 04期

关键词：

D O I：

10.1016/0038-1098(79)90338-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A novel, highly sensitive spectroscopic technique for the investigation of excited impurity states in semiconductors is demonstrated for Li- compensated n-type ZnSe and for p-type ZnTe:P. Donor/acceptor pairs with one partner in an excited state are pumped selectively to assure optimal radiative re-emission after fast de-excitation of the electron or hole, respectively. Luminescence is confined to a sharp line riding on the high energy shoulder of the pair band. © 1979.

引用

页码：219 / 221

页数：3

共 15 条

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