REACTION BETWEEN SIC AND W, MO, AND TA AT ELEVATED-TEMPERATURES

The stability of W, Mo, and Ta in contact with single-crystal β-SiC at elevated temperatures has been investigated using Auger sputter profiling. All three metals were found to form a thin-mixed layer of metal carbide and silicide upon metal deposition at room temperature. This layer is thought to be the result of surface defects which weaken the Si - C bonds and allow a low-temperature reaction to occur. Upon heating, the Ta readily reacts with the SiC substrate and forms a mixed layer of Ta carbide and silicide at annealing temperatures as low as 400 °C, however, the W/SiC and Mo/SiC systems are stable and change very little after annealing at 850 and 800 °C, respectively.