EFFECT OF ULTRAVIOLET-IRRADIATION ON SURFACE RECOMBINATION VELOCITY IN SILICON-WAFERS

被引：10

作者：

BUCZKOWSKI, A

ROZGONYI, GA

SHIMURA, F

机构：

[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 2B期

关键词：

LIFETIME MEASUREMENTS; LASER MICROWAVE PHOTOCONDUCTANCE TECHNIQUE; SILICON WAFERS; ULTRAVIOLET LIGHT IRRADIATION EFFECTS; SURFACE RECOMBINATION VELOCITY;

D O I：

10.1143/JJAP.32.L218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theoretical explanation of surface recombination velocity reduction observed in silicon material irradiated by ultraviolet light is presented. The time dependent UV effect found in wafers covered by a native oxide results from a slow state discharge process which capture electrons during high energy photon exposure. The capture process is followed by a surface potential change which modifies the surface recombination velocity. As the slow states discharge, the original value of surface activity is recovered.

引用

页码：L218 / L221

页数：4

共 9 条

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APPLIED PHYSICS LETTERS, 1992, 61 (08) :931-933

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