EFFECT OF ULTRAVIOLET-LIGHT IRRADIATION ON NONCONTACT LASER MICROWAVE LIFETIME MEASUREMENT

被引：23

作者：

KATAYAMA, K

KIRINO, Y

IBA, K

SHIMURA, F

机构：

[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC

[2] Chichibu, Saitama, 369-18

[3] R&D Center, Toshiba Ceramics Co., Ltd, Hadano, Kanagawa, 257

[4] SEMITEX Co., Ltd., Tama-shi, Tokyo, 206

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 11B期

关键词：

LIFETIME MEASUREMENT; NONCONTACT CHARACTERIZATION; LASER MICROWAVE TECHNIQUE; SURFACE RECOMBINATION; SILICON WAFER; ULTRAVIOLET LIGHT IRRADIATION; NATIVE OXIDE;

D O I：

10.1143/JJAP.30.L1907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultraviolet (UV) irradiation effect on minority-carrier recombination lifetime measured by a noncontact laser/microwave (LM) method is investigated for silicon wafers with native oxide. After UV irradiation, the surface recombination velocity greatly decreased resulting in the increase in the effective recombination lifetime (tau(eff)). The effect disappears rapidly with time after the irradiation, and tau(eff) recovers to the initial value after several minutes at room temperature. Since the UV irradiation process is noncontact and nondestructive, the irradiation is proposed to minimize the surface effect of sample, in turn, to obtain the bulk lifetime (tau(b)) with a noncontact LM lifetime measurement method.

引用

页码：L1907 / L1910

页数：4

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