MECHANISM OF ULTRAVIOLET-IRRADIATION EFFECT ON SI-SIO2 INTERFACE IN SILICON-WAFERS

被引：16

作者：

KATAYAMA, K ^{[1
]}

SHIMURA, F ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8A期

关键词：

LIFETIME MEASUREMENT; LASER MICROWAVE PHOTOCONDUCTANCE TECHNIQUE; NONCONTACT MATERIAL CHARACTERIZATION; SILICON CRYSTAL; WAFER SURFACE; NATIVE OXIDE; ULTRAVIOLET LIGHT IRRADIATION; SURFACE RECOMBINATION VELOCITY;

D O I：

10.1143/JJAP.31.L1001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of ultraviolet (UV) irradiation on the effective minority-carrier recombination lifetime (tau(eff)) in silicon wafers was studied by a noncontact laser/microwave photoconductance (LM-PC) technique. The tau(eff) greatly increased in samples with native oxide after the irradiation, which can be attributed to an increase in the surface recombination lifetime (tau(s)) due to the change in the surface carrier recombination velocity (S). The dominant factor for the tau(s) change can be negative charges created by the photo-induced electrons in the surface area. The band bending near the Si-SiO2 interface, which is caused by the electric field generated by negative charges, plays a dominant role in changing S.

引用

页码：L1001 / L1004

页数：4

共 20 条

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