SPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIES

被引:13
作者
CHIN, A [1 ]
HSIEH, KY [1 ]
LIN, HY [1 ]
机构
[1] NATL SUN YAT SEN UNIV,INST MAT SCI & ENGN,KAOHSIUNG,TAIWAN
关键词
D O I
10.1063/1.112817
中图分类号
O59 [应用物理学];
学科分类号
摘要
Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 angstrom Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation. (C) 1994 American Institute of Physics.
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页码:1921 / 1923
页数:3
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