PARTIAL ORDERING AND ENHANCED MOBILITY IN GA0.47IN0.53AS GROWN ON VICINAL (110)INP

被引：27

作者：

CHIN, A ^{[1
]}

CHANG, TY ^{[1
]}

OURMAZD, A ^{[1
]}

MONBERG, EM ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.104458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6-degrees off (110) towards the (111bar) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates.

引用

页码：968 / 970

页数：3

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