EXPERIMENTAL-STUDY OF THE ORIENTATION EFFECT OF GAAS-MESFETS FABRICATED ON (100), (011), AND (111BAR) GA, AND (111) AS SUBSTRATES

被引：6

作者：

ONODERA, T ^{[1
]}

KAWATA, H ^{[1
]}

NISHI, H ^{[1
]}

FUTATSUGI, T ^{[1
]}

YOKOYAMA, N ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1586 / 1590

页数：5

相关论文

共 26 条

[1] SYMMETRY OF INTERFACE CHARGE DISTRIBUTION IN THERMALLY OXIDIZED SILICON
ABOWITZ, G
ARNOLD, E
LADELL, J
[J]. PHYSICAL REVIEW LETTERS, 1967, 18 (14) : 543 - +
[2] PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS
ASBECK, PM
LEE, CP
CHANG, MCF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1377 - 1380
[3] ROLE OF THE PIEZOELECTRIC EFFECT IN DEVICE UNIFORMITY OF GAAS INTEGRATED-CIRCUITS
CHANG, MF
LEE, CP
ASBECK, PM
VAHRENKAMP, RP
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 279 - 281
[4] CHEN CH, 1986, IEEE T ELECTRON DEV, V33, P792, DOI 10.1109/T-ED.1986.22570
[5] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &
[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[7] ESAKI L, 1974, JAPN J APPL PHY 1 S2, V2, P821
[8] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[9] GRAY PV, 1968, APPL PHYS LETT, V114, P266
[10] IKOMA T, 1983, HDB COMPOUND SEMICON, P164