LIQUID ENCAPSULATED, VERTICAL BRIDGMAN GROWTH OF LARGE DIAMETER, LOW DISLOCATION DENSITY, SEMI-INSULATING GAAS

被引：40

作者：

HOSHIKAWA, K

NAKANISHI, H

KOHDA, H

SASAURA, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90087-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：643 / 650

页数：8

共 24 条

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