SURFACE STABILITY OF ORDERED LATTICE-MISMATCHED III-V ALLOYS

被引:18
作者
BOGUSLAWSKI, P [1 ]
机构
[1] ECOLE POLYTECH FED LAUSANNE,INST ROMAND RECH NUMER PHYS MAT,CH-1015 LAUSANNE,SWITZERLAND
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 06期
关键词
D O I
10.1103/PhysRevB.42.3737
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Unintentional growth of [111]-oriented monolayer superlattices was recently observed by several research groups for several epitaxial lattice-mismatched III-V alloys. It is shown that chemically ordered (001) surfaces terminating these systems are stable against two-dimensional (2D) segregation at the surface at T=0 K. Surface stability occurs in spite of the global instability against 3D segregation into end compounds. Ordered surfaces of (100) monolayer and (110) bilayer superlattices are also analyzed. © 1990 The American Physical Society.
引用
收藏
页码:3737 / 3740
页数:4
相关论文
共 28 条
  • [1] ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS
    BERNARD, JE
    FERREIRA, LG
    WEI, SH
    ZUNGER, A
    [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6338 - 6341
  • [2] EXCESS ELASTIC ENERGY AND THE INSTABILITY OF (GAAS)1(INAS)1(001), GA3INAS4, GAIN3AS4 AND GA1-XINXAS ALLOYS
    BOGUSLAWSKI, P
    BALDERESCHI, A
    [J]. SOLID STATE COMMUNICATIONS, 1988, 66 (06) : 679 - 682
  • [3] EXCESS ELASTIC ENERGY AND THE INSTABILITY OF BULK AND EPITAXIAL LATTICE-MISMATCHED MONOLAYER (001) SUPERLATTICES
    BOGUSLAWSKI, P
    BALDERESCHI, A
    [J]. PHYSICAL REVIEW B, 1989, 39 (11): : 8055 - 8058
  • [4] SEMICONDUCTOR PSEUDOBINARY ALLOYS - BOND-LENGTH RELAXATION AND MIXING ENTHALPIES
    CHEN, AB
    SHER, A
    [J]. PHYSICAL REVIEW B, 1985, 32 (06): : 3695 - 3711
  • [5] DISORDERING OF THE ORDERED STRUCTURE IN MOCVD-GROWN GAINP AND ALGAINP BY IMPURITY DIFFUSION AND THERMAL ANNEALING
    GAVRILOVIC, P
    DABKOWSKI, FP
    MEEHAN, K
    WILLIAMS, JE
    STUTIUS, W
    HSIEH, KC
    HOLONYAK, N
    SHAHID, MA
    MAHAJAN, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 426 - 433
  • [6] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
    GOMYO, A
    SUZUKI, T
    IIJIMA, S
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (25) : 2645 - 2648
  • [7] ORDERING IN GAAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY
    IHM, YE
    OTSUKA, N
    KLEM, J
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2013 - 2015
  • [8] LONG-RANGE [111] ORDERING IN GAAS1-XPX
    JEN, HR
    CAO, DS
    STRINGFELLOW, GB
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1890 - 1892
  • [9] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    JEN, HR
    CHERNG, MJ
    STRINGFELLOW, GB
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1603 - 1605
  • [10] LONG-RANGE ORDER IN INASSB
    JEN, HR
    MA, KY
    STRINGFELLOW, GB
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1154 - 1156